Design of Double-Independent-Gate Ambipolar Silicon-Nanowire Field Effect Transistor
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Journal of the Korea Institute of Information and Communication Engineering
سال: 2015
ISSN: 2234-4772
DOI: 10.6109/jkiice.2015.19.12.2892